Carrier Localization in Basal-Plane Stacking Faults in Si-Doped Nonpolar a-Plane (1120) GaN Epilayers Containing Different Defect Densities-Reference-Cited by-同舟云学术

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Carrier Localization in Basal-Plane Stacking Faults in Si-Doped Nonpolar a-Plane (1120) GaN Epilayers Containing Different Defect Densities

Published:2016-11-01 Issue:11 Volume:16 Page:11591-11598
ISSN:1533-4880
Container-title:Journal of Nanoscience and Nanotechnology
language:en
Short-container-title:j nanosci nanotechnol

Author:

Kim Jihoon¹,Hwang Sung-Min²,Seo Yong Gon²,Song Jung-Hoon³,Park Ki-Nam³,Park Jung-Ho⁴,Jang Soohwan⁵,Baik Kwang Hyeon⁶

Affiliation:

1. Quantum Semiconductor International Co. Ltd., Chungnam 331-836, Republic of Korea

2. Korea Electronics Technology Institute, Gyeonggi 463-816, Republic of Korea

3. Department of Physics, Kongju National University, Chungnam 314-701, Republic of Korea

4. Department of Electrical Engineering, Korea University, Seoul 136-713, Republic of Korea

5. Department of Chemical Engineering, Dankook University, Gyeonggi 448-701, Republic of Korea

6. School of Materials Science and Engineering, Hongik University, Sejong 339-701, Republic of Korea

Publisher

American Scientific Publishers

Subject

Condensed Matter Physics,General Materials Science,Biomedical Engineering,General Chemistry,Bioengineering

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