Organic Position-Sensitive Detectors Based on ZnO:Al and CuPc:C60

Abstract

Organic position-sensitive detector (OPSD) based on copper phthalocyanine CuPc:fullerene C60 bulk-heterojunction with an inverted structure have been fabricated using aluminum doped ZnO (ZnO:Al) as a resistive layer, which is prepared by sol–gel method. The resistance length of the one-dimensional PSD is fixed at 5 mm, and the Ag common electrode is fabricated by vacuum evaporation within the 100-μm width. The current density–voltage characteristics with different structures of photodetector, the influence of ZnO:Al resistivity on the thickness and the position characteristics of PSDs are investigated. The experimental results indicate that the architecture, which uses an inverted structure, increases sensitivity under red light illumination compared to the conventional structure. In addition, the thickness of the ZnO:Al has influence on the position characteristics. The resistivity of ZnO:Al film with Al doping concentration of 2 mol% prepared in this study is around 150 Ωcm and it increases from less than approximately 400 nm-thickness. These characteristics seem to be correlated with the properties of ZnO:Al resistive layer. For a device with a 620 nm-thick ZnO:Al layer, the measured position values obtained from the output photocurrent agree with the actual position values under red laser light illumination. CuPc:C60 OPSD with an inverted structure exhibits red light sensitivity, high incident-photon-to-current conversion efficiency of above 80% at −3 V and linearity error of 5.9% at −2V.