Effect of Amorphous and Crystalline AlN Buffer Layers Deposited on Patterned Sapphire Substrate on GaN Film Quality
Author:
Affiliation:
1. Department of Materials Science and Engineering, Korea University, Seoul 02841, Korea
2. Quality Planning Team, Quality Management Division, LG Innotek, Seoul 04637, Korea
Publisher
American Scientific Publishers
Subject
Condensed Matter Physics,General Materials Science,Biomedical Engineering,General Chemistry,Bioengineering
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Atomic layer annealing with radio-frequency substrate bias for control of grain morphology in gallium nitride thin films;MRS Bulletin;2023-06-15
2. Pulsed chemical vapor deposition for crystalline aluminum nitride thin films and buffer layers on silicon and silicon carbide;Thin Solid Films;2023-03
3. Deterministically-grown GaN microrods on a mask-free plateau patterned substrate;Vacuum;2023-01
4. Effect of initial condition on the quality of GaN film and AlGaN/GaN heterojunction grown on flat sapphire substrate with ex-situ sputtered AlN by MOCVD;Vacuum;2022-07
5. Influence of Size on Optical and Electrical Properties of GaN-Based Membrane μ-LED;Journal of Nanoscience and Nanotechnology;2020-01-01
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