Impact Produced by Recrystallization of Mechanically Destroyed Layer on Planar Side of Silicon Wafer Upon Electrical Parameters of CMOS Microcircuits-Reference-Cited by-同舟云学术

Impact Produced by Recrystallization of Mechanically Destroyed Layer on Planar Side of Silicon Wafer Upon Electrical Parameters of CMOS Microcircuits

Published:2024-06-23 Issue:3 Volume:22 Page:21-27
ISSN:2708-0382
Container-title:Doklady BGUIR
language:
Short-container-title:Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki

Author:

Pilipenka U. A.¹,Saladukha V. A.²,Siarheichyk H. A.¹,Shestouski D. U.¹

Affiliation:

1. JSC “INTEGRAL” – Manager Holding Company “INTEGRAL”

2. SSPA “Optics, Optoelectronics, and Laser Technology” of the National Academy of Sciences

Abstract

The influence of recrystallization of a mechanically damaged layer on the working side of a silicon wafer using rapid heat treatment (1000 °C, 20 s) on the electrical parameters of complementary metal-oxide-semiconductor microcircuits has been established. The analyzed characteristics of n- and p-channel transistors were selected: drain current from the gate voltage when diode-connected; output characteristics at various gate voltages; drain current from the drain voltage without applying potential to the gate; percentage of yield of suitable products. These parameters were compared with microcircuits manufactured using standard technology. Analysis of the results showed that rapid thermal treatment of the original silicon wafers can significantly improve the above characteristics of n-channel metal-oxide-semiconductor ( n-MOS) and p-channel metal-oxide-semiconductor (p-MOS) transistors by reducing the fixed charge in gate dielectric obtained by pyrogenic oxidation of silicon. This makes it possible to improve the quality of manufactured complementary metal-oxide-semiconductor microcircuits and increase the percentage of yield of suitable products from 74.38 to 77.53 %.

Publisher

Belarusian State University of Informatics and Radioelectronics

Reference13 articles.

1. Zee S. M. (ed.) (1986) LSIIC Technology. In 2 Vol. Moscow, Mir Publ. Vol. 1 (in Russian).

2. Krasnikov G. Y., Zaitsev N. А. (1999) Physical and Technological Fundamentals of LSIIC Quality Management . Part 2. Moscow, Micron-Print Publ. (in Russian).

3. Nalivaiko O. Yu., Solodukha V. A., Pilipenko V. A., Kolos V. V., Belous A. I., Chelyadinsky A. R., et al. (2013) Basic Technological Processes for Production of Semiconductor Devices and Silicon Integrated Microcircuits. In 3 Vol. Minsk, Integral-Poligraph, Publ. Vol. 1 (in Russian).

4. Zее S. M. (ed.) (1986) LSIIC Technology. In 2 Vol. Moscow, Mir Publ. Vol. 2 (in Russian).

5. Anishchik V. М., Gorushko V. А., Pilipenko V. А., Ponariadov V. V., Solodukha V. A. (2018) Impact Produced by Rapid Thermal Treatment on Source Silicon Wafers on the Process of Their Pyrogenic Oxidation. Journal of Belarusian State University. Physics . (2), 81–85 (in Russian).