10.1023/a:1015381021448
Author:
Publisher
Springer Science and Business Media LLC
Subject
Instrumentation
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Model-free determination of the dependence of charge density in accumulation and inversion semiconductor layers on the semiconductor surface potential from the voltage-capacitance characteristics of metal-insulator-semiconductor structures;Journal of Communications Technology and Electronics;2008-07
2. The new approach in the determination of the dependency of surface charge density on semiconductor surface potential based voltage: capacity analysis of the depletion region of MIS-structures;SPIE Proceedings;2008-03-03
3. Reconstruction of the potential profile in an insulating layer using current-voltage characteristics of tunneling MIS diodes;Semiconductors;2008-01
4. Reconstruction of dependences of the tunneling current on the oxide voltage using the dynamic current-voltage characteristics of the n +-Si-SiO2-n-Si heterostructures;Semiconductors;2007-09
5. Increase in the Rate and Discretization of the Kinetics of Isothermal Surface Generation of Minority Charge Carriers in Metal–Insulator–Semiconductor Structures with a Planar-Inhomogeneous Insulator;Semiconductors;2005
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