Structure of aluminum films for creating tunnel junctions.

Abstract

A series of studies of the structure of aluminum films deposited on single-crystalsilicon substrates in different temperature conditions. The roughness and grain size of films of nuclei 20 nm thick, deposited at elevated temperatures, and also dusted on top of the seed layer at room temperature to a thickness of 150 nm. The film profile was measured in an electron microscope. It was found that films on the hot sublayer turn out to be smoother, more rigid (less loose) and allow one to expect the creation of superconductor–insulator–superconductor and superconductor–insulator–normal metal transitions, respectively, with a higher current density and lower capacitance.