GALLIUM NANOPARTICLES OBTAINED ON SILICON SUBSTRATES BY THERMAL EVAPORATION METHOD-Reference-Cited by-同舟云学术

GALLIUM NANOPARTICLES OBTAINED ON SILICON SUBSTRATES BY THERMAL EVAPORATION METHOD

Published:2023-03-01 Issue:2 Volume:68 Page:313-318
ISSN:0023-4761
Container-title:Кристаллография
language:
Short-container-title:Kristallografiâ

Author:

Kozhemyakin G. N.¹,Belov Yu. S.²,Trufanova M. K.³,Artemov V. V.¹,Volchkov I. S.¹

Affiliation:

1. Shubnikov Institute of Crystallography, Federal Scientific and Research Center “Crystallography and Photonics,” Russian Academy of Sciences, Moscow, 119333 Russia

2. Bauman Moscow State Technical University, Kaluga Branch, Kaluga, 248000 Russia

3. Vladimir Dal Lugansk State University, Lugansk, 91034 Russia

Abstract

Gallium nanostructures have been obtained on silicon substrates by thermal evaporation in an argon atmosphere. The sizes, density, and shape of Ga particles have been determined by computer processing of electron SEM-images. The condensation of Ga on Si substrates for 10, 15, and 20 s ensured the formation of particles of several types: spherical, triangular, square, and in the form of rods and polyhedrons. The increase in the Ga condensation time to 20 s led to the increase in the density of spherical nanoparticles by 41%.

Publisher

The Russian Academy of Sciences

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