Affiliation:
1. National Research University “Moscow Power Engineering Institute”
2. Institute of Nanotechnology of Microelectronics RAS
3. National Research Center “Kurchatov Institute”
Abstract
The influence of the electric field frequency in the range from 0.1 to 2.0 MHz during plasma-chemical deposition of diamond-like silicon-carbon films on their chemical composition, structure, and electrical properties has been studied. It is shown that the films obtained in the entire studied frequency range have an amorphous structure with a constant, within the measurement precision, chemical composition. At the same time, the morphology of the surface of the films and their electrophysical properties significantly depend on the frequency of the electric field during plasma-chemical deposition. This makes it possible to use the change in the field frequency in the preparation of films as a method of controlling their properties. The frequency range providing the most effective modification of electrophysical properties is determined.
Publisher
The Russian Academy of Sciences