Changes in the kinetic characteristics of free charge carriers in a narrow-gap semiconductor Pb<sub>1 – <i>x</i></sub>Gd<sub><i>x</i></sub>Te under the influence of electron paramagnetic resonance processes of Gd<sup>3+</sup> ions

Author:

Ulanov V. A.12,Zainullin R. R.1,Yatsyk I. V.2,Fazlizhanov I. I.2

Affiliation:

1. Kazan State Power Engineering University

2. Zavoisky Physical-Technical Institute, Federal Research Center “Kazan Scientific Center of the Russian Academy of Sciences”

Abstract

In crystals of the narrow-gap semiconductor Pb1 – xGdxTe (x = 1.5 · 10–4) at temperatures T = 5–100 K, the method of electron paramagnetic resonance (EPR) revealed unusual dependences of the line shape of the EPR spectra of paramagnetic Gd3+ centers on temperature and the microwave power level in the spectrometer cavity. Based on the results of the analysis of the shape parameters of resonance lines recorded in the X-band, it was concluded that the most probable cause of changes in the observed EPR spectra is the effect of resonance transitions between the spin levels of Gd3+ centers on the kinetic characteristics of free charge carriers bound by exchange interactions with Gd3+ ions.

Publisher

The Russian Academy of Sciences

Reference17 articles.

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