Low-temperature properties of a silicon-based sub-THz detector-Reference-Cited by-同舟云学术

Low-temperature properties of a silicon-based sub-THz detector

Published:2023-02-01 Issue:2 Volume:87 Page:172-176
ISSN:0367-6765
Container-title:Известия Российской академии наук. Серия физическая
language:
Short-container-title:Izvestiâ Akademii nauk SSSR. Seriâ fizičeskaâ

Author:

Khisameeva A. R.¹,Shchepetilnikov A. V.¹,Fedotova Ya. V.¹,Dremin A. A.¹,Kukushkin I. V.¹

Affiliation:

1. Institute of Solid State Physics of the Russian Academy of Science

Abstract

Characteristics of the silicon-based sub-THz plasmon detector were studied in a wide temperature range, down to the temperature of the liquid nitrogen. Temperature dependences of the detector sensitivity were obtained, and its noise characteristics were studied. The frequency dependence of the sensitivity in the frequency range 70–120 GHz was measured at room temperature, with the maximum of 25 V/W reached at the frequency of 96 GHz. The noise equivalent power of the detector under study was estimated assuming that the main source of noise was of Nyquist nature and varied from a value of 2 · 10–10 W · Hz–1/2 at room temperature down to 2 · 10–11 W · Hz–1/2 at temperature of the liquid nitrogen. Additionally, the volt-ampere characteristics of the sub-THz detector were investigated. It was found that the feature in the differential resistance and sensitivity as a function of the applied DC voltage emerges at the temperature of the liquid nitrogen.

Publisher

The Russian Academy of Sciences

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