Growth and electron transport characteristics of epitaxial thin strontium iridate films-Reference-Cited by-同舟云学术

Growth and electron transport characteristics of epitaxial thin strontium iridate films

Published:2023-03-01 Issue:3 Volume:87 Page:429-433
ISSN:0367-6765
Container-title:Известия Российской академии наук. Серия физическая
language:
Short-container-title:Izvestiâ Akademii nauk SSSR. Seriâ fizičeskaâ

Author:

Moskal I. E.¹²,Nagornykh K. E.³,Petrzhik A. M.¹,Kislinsky Yu. V.¹,Konstantinyan K. I.¹,Shadrin A. V.¹³,Ovsyannikov G. A.¹

Affiliation:

1. Kotelnikov Institute of Radioengineering and Electronics of the Russian Academy of Sciences

2. MIREA – Russian Technological University

3. Moscow Institute of Physics and Technology

Abstract

The results of a study of epitaxial thin films of strontium iridate with the compositions Sr2IrO4 and SrIrO3 obtained by laser ablation and direct current cathode sputtering, respectively, are presented. Data on the growth technology, crystal structure, electrophysical parameters are given, and the activation energy for low-defect dielectric Sr2IrO4 films is calculated.

Publisher

The Russian Academy of Sciences

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