GaN/AlGaN resonant Bragg structure-Reference-Cited by-同舟云学术

GaN/AlGaN resonant Bragg structure

Published:2023-06-01 Issue:6 Volume:87 Page:892-895
ISSN:0367-6765
Container-title:Известия Российской академии наук. Серия физическая
language:
Short-container-title:Izvestiâ Akademii nauk SSSR. Seriâ fizičeskaâ

Author:

Ivanov A. A.¹,Chaldyshev V. V.¹,Zavarin E. E.¹,Sakharov A. V.¹,Lundin W. V.¹,Tsatsulnikov A. F.²

Affiliation:

1. Ioffe Physical-Technical Institute of the Russian Academy of Sciences

2. Submicron Heterostructures for Microelectronics Research & Engineering Center of the Russian Academy of Sciences

Abstract

Reflection spectra from a resonant Bragg structure with 30 GaN/AlGaN quantum wells have been measured at room temperature. Numerical modeling using the method of transfer matrices gave a quantitatively accurate fit of the experimental results. Defined radiative and non-radiative broadening parameters of the exciton in GaN/AlGaN quantum wells.

Publisher

The Russian Academy of Sciences

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