Hydrogen Plasma under Conditions of Electron-Cyclotron Resonance in Microelectronics Technology-Reference-Cited by-同舟云学术

Hydrogen Plasma under Conditions of Electron-Cyclotron Resonance in Microelectronics Technology

Published:2023-05-01 Issue:3 Volume:52 Page:236-239
ISSN:0544-1269
Container-title:Микроэлектроника
language:
Short-container-title:Mikroèlektronika

Author:

Polushkin E. A.¹²,Nefed’ev S. V.¹,Koval’chuk A. V.²,Soltanovich O. A.²,Shapoval S. Yu.²

Affiliation:

1. JSC Molecular Electronics Research Institute

2. Institution of Science, Institute of Problems of Microelectronics Technology and High-Purity Materials, Russian Academy of Sciences

Abstract

This paper presents the results of hydrogen electron-cyclotron resonance (ECR) plasma in micro-electronics technology. Its effect on the radiation resistance of the IC and on the quality of the ohmic contact during the formation of UBM metallization is demonstrated. The devices obtained with the use of plasma ECR and without it are analyzed.

Publisher

The Russian Academy of Sciences

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