Author:
Lebedev A A,Ivanov P A,Levinshtein M E,Mokhov E N,Nagalyuk S S,Anisimov A N,Baranov P G
Abstract
Abstract
We review the history and modern state of silicon carbide and SiC-based devices. The main techniques for growing bulk SiC crystals and epitaxial SiC films are discussed. Epitaxial SiC structures used for post-growth processing are briefly reviewed. The state of the art achieved in developing SiC devices is presented. The main problems that occur in developing SiC equipment and prospects for designing and developing such equipment are analyzed.
Publisher
Uspekhi Fizicheskikh Nauk (UFN) Journal
Subject
General Physics and Astronomy
Cited by
10 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献