Impurity ion implantation into silicon single crystals: efficiency and radiation damage
Author:
Publisher
Uspekhi Fizicheskikh Nauk (UFN) Journal
Subject
General Physics and Astronomy
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Effect of Thermal Annealings and Cooling Methods on Electrophysical Parameters of n Si Doped with Phosphorus Impurity Via the Melt and by Nuclear Transmutation Technique;Фізика і хімія твердого тіла;2018-03-15
2. Investigation of an ion-implanted semiconductor layer by X-ray fluorescence analysis and ellipsometry;Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques;2017-03
3. Quantum chemical study of the properties of an SiO2/Si(100) interface implanted with boron ions;Bulletin of the Russian Academy of Sciences: Physics;2010-02
4. Magnetic resistance of silicon specimens with manganese impurities;Journal of Communications Technology and Electronics;2007-09
5. Defect-impurity engineering in implanted silicon;Physics-Uspekhi;2003-08-31
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