Coulomb gap and metalinsulator transitions in doped semiconductors-Reference-Cited by-同舟云学术

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Coulomb gap and metalinsulator transitions in doped semiconductors

Published:1998-07 Issue:07 Volume:168 Page:804-808
ISSN:0042-1294
Container-title:Uspekhi Fizicheskih Nauk
language:ru
Short-container-title:Usp. Fiz. Nauk

Author:

Zabrodskii Andrei G.

Publisher

Uspekhi Fizicheskikh Nauk (UFN) Journal

Subject

General Physics and Astronomy

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Features of the fine structure of the fundamental absorption edge in low-doped semiconductor quantum wells with allowance for the Coulomb gap;Journal of Contemporary Physics (Armenian Academy of Sciences);2009-03-07

2. Influence of the Coulomb gap on the impurity absorption in AIIIBV semiconductors;Journal of Contemporary Physics (Armenian Academy of Sciences);2009-01-08

3. An Interpolation Formula for the Coulomb Gap in Lightly Doped and Compensated Semiconductors;Physics of the Solid State;2005

4. Many-electron Coulomb correlations in hopping transport along layers of quantum dots;Journal of Experimental and Theoretical Physics Letters;2003-08

5. Microwave magnetoresistance of compensated p-Ge:Ga in the region of the insulator-metal phase transition;Semiconductors;2002-07

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