80 MeV Carbon Ion Irradiation Effects On Advanced 200 GHz Silicon-germanium Heterojunction Bipolar Transitors-Reference-Cited by-同舟云学术

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80 MeV Carbon Ion Irradiation Effects On Advanced 200 GHz Silicon-germanium Heterojunction Bipolar Transitors

Published:2015-02-01 Issue:2 Volume:6 Page:120-126
ISSN:0976-397X
Container-title:Advanced Materials Letters
language:en
Short-container-title:Adv. Mater. Lett.

Author:

Vinayakprasanna N.H.,Praveen K.C.,Pushpa N.,Tripathi Ambuj,D Cressler John,Gnana Prakash A.P.

Publisher

International Association of Advanced Materials

Subject

General Materials Science

Link

http://aml.iaamonline.org/article_14623_41905d85a2a72361be29c86a7482f40f.pdf

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The effect of electrical stress and thermal annealing on swift heavy ion irradiated SiGe HBTs;Nuclear and Particle Physics Proceedings;2023-08

2. Radiation Sensor Design for Mitigation of Total Ionizing Dose Effects;Lecture Notes in Electrical Engineering;2022-12-01

3. High energy swift heavy ion irradiation and annealing effects on DC electrical characteristics of 200 GHz SiGe HBTs;Nuclear Engineering and Technology;2019-08

4. A Comparison of Electron, Proton and Gamma Irradiation Effects on the I-V Characteristics of 200 GHz SiGe HBTs;IEEE Transactions on Device and Materials Reliability;2018-12

5. 5 MeV Proton irradiation effects on 200 GHz silicon–germanium heterojunction bipolar transistors;Radiation Effects and Defects in Solids;2017-12-02

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