Author:
Mounir Mounir, ,Mabchour Mabchour,Ennajh D.,El oujdi A.,El kaaouachi El kaaouachi,Ait Hammou B.,Echchelh A.,Dlimi Dlimi, , , , , ,
Abstract
In this work, we study the behavior of resistivity as a function of temperature and for several samples of ZnSxSe1-x thin films with x = 0, 0.2, 0.4, 0.5, 0.6, 0.8 and 1.0 respectively. In fact, we re-analyze in our investigation experimental measurements obtained by M. Popa et al. [1] in the range of temperature from 300 K to 500 K. We showed that the resistivity follows a nearest neighbor site hopping conduction mechanism with 𝝆 = 𝝆𝟎𝐞𝐱𝐩 ( 𝑬𝒂 𝒌𝑩𝑻 ) for very high temperatures and Mott variable range hopping conduction with 𝝆 = 𝝆𝑪𝐞𝐱𝐩 (𝑻𝟎 𝑻 )𝟏/𝟒 for relatively low temperatures. The crossover between the two regimes can be explained by the competition between the localization length scale 𝝃𝒍𝒐𝒄and the hopping length scale 𝑹𝒉𝒐𝒑.
Publisher
National Academy of Sciences of the Republic of Armenia
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