Preparation of ZnO film on p-Si and I-V characteristics of p-Si/n-ZnO

Author:

Mondal Shampa1,Kanta Kalyani Prasad1,Mitra Partha1

Affiliation:

1. The University of Burdwan, India

Publisher

FapUNIFESP (SciELO)

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference19 articles.

1. High current fast switching n-ZnO/p-Si diode;Choi Y;Journal of Physics D: Applied Physics,2012

2. Rectifying and Photovoltage properties of ZnO:Al/p-Si heterojunction;Jing MA;Chinese Physics Letter,2010

3. Structural, electrical and optical properties of ZnO/Si structures prepared by sputtering or pulsed laser deposition;Skriniarova J;Journal of Physics: Conference Series,2008

4. Properties of ZnO thin films grown on Si substrates by MOCVD and ZnO/Si heterojunctions;Zhang Y;Semiconductor Science and Technology,2005

5. Photoresponse of n-ZnO/p‑Si heterojunction towards ultraviolet/visible lights: thickness dependent behavior;Mridha S;Journal of Materials Science: Materials in Electronics,2008

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