Strained In1-xGaxAsyP1-y/InP quantum well heterostructures grown by low-pressure metalorganic vapor phase epitaxy
Author:
Affiliation:
1. Associação Brasileira de Luz Síncrotron, Brazil
2. Universidade Estadual de Campinas, Brazil
Publisher
FapUNIFESP (SciELO)
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Link
http://www.scielo.br/pdf/mr/v2n2/0008.pdf
Reference15 articles.
1. Fabrication, characterization and analysis of low threshold current density 1.55-μm-strained quantum-well lasers
2. 1.5-μm strained-layer MQW-DFB lasers with high relaxation-oscillation frequency and low-chirp characteristics
3. 1.95-µm-wavelength InGaAs/InGaAsP Laser with Compressively Strained Quantum Well Active Layer
4. Lateral modulations in zero‐net‐strained GaInAsP multilayers grown by gas source molecular‐beam epitaxy
5. Morphological and compositional variations in strain-compensated InGaAsP/InGaP superlattices
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