Phosphorus emitter and metal - grid optimization for homogeneous (n+p) and double-diffused (n++n+p) emitter silicon solar cells
Author:
Affiliation:
1. Universidade de São Paulo, Brazil
Publisher
FapUNIFESP (SciELO)
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Link
http://www.scielo.br/pdf/mr/v12n1/06.pdf
Reference14 articles.
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3. Surface Recombination Velocity of Highly Doped n-type Silicon;Cuevas A;Journal of Applied Physics,1996
4. Numerical Modeling of Highly Doped Silicon: P Emitters Based on Fermi-Dirac Statistics and Self Consistent Material Parameters;Altermatt PP;Journal of Applied Physics,2002
5. Co-optimization of the Emitter Region and the Metal-Grid of Silicon Solar Cells;Cuevas A;Progress in Photovoltaics: Research and Applications,2000
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