Growth of CaF2 buffer on Si using low energy cluster beam deposition technique and study of its properties-Reference-Cited by-同舟云学术

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Growth of CaF2 buffer on Si using low energy cluster beam deposition technique and study of its properties

Published:1999-06 Issue:2 Volume:29 Page:388-392
ISSN:0103-9733
Container-title:Brazilian Journal of Physics
language:en
Short-container-title:Braz. J. Phys.

Author:

Bhagwat S.S.,Bhangale A.R.,Patil J.M.,Shirodkar V.S.,Pinto R.,Apte P.R.,Pai S.P.

Publisher

FapUNIFESP (SciELO)

Subject

General Physics and Astronomy

Link

http://www.scielo.br/pdf/bjp/v29n2/V29_388.pdf

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Calcium fluoride as high-k dielectric for 2D electronics;Applied Physics Reviews;2021-06

2. Investigation of the Range of Fluoride Ion Concentration Applicable to Calcium Fluoride Crystallization;KAGAKU KOGAKU RONBUNSHU;2005

3. Microwave characterisation of CaF2 at cryogenic temperatures using a dielectric resonator technique;Journal of the European Ceramic Society;2003-01

4. Growth of YBCO superconducting thin films on CaF2 buffered silicon;Brazilian Journal of Physics;2000

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