Preparation and Characterization of CdO/In6Se7 Thin Film Transistors-Reference-Cited by-同舟云学术

Preparation and Characterization of CdO/In6Se7 Thin Film Transistors

Published:2020 Issue:6 Volume:23 Page:
ISSN:1980-5373
Container-title:Materials Research
language:
Short-container-title:Mat. Res.

Author:

AlGarni Sabah E.¹,Qasrawi A. F.²^ORCID

Affiliation:

1. King Abdulaziz University, Saudi Arabia; University of Jeddah, Saudi Arabia

2. Arab American University, Palestine; Atilim University, Turkey

Publisher

FapUNIFESP (SciELO)

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

http://www.scielo.br/pdf/mr/v23n6/1516-1439-mr-23-6-e20200449.pdf

Reference22 articles.

1. Photon–Plasmon Coupling for Fundamental-Mode Phase-Matched Third Harmonic and Triplet Photon Generation;Huang T;J Lightwave Technol,2018

2. Tailoring and optimization of optical properties of CdO thin films for gas sensing applications;Rajput JK;Physica B,2018

3. Structural, electrical and optical characterization of Mn doped CdO photodiodes;Dugan S;J Mol Struct,2020

4. P‐ 9.6:ultrathin Indium selenide (In2Se3) thin films and field‐ effect transistors for active matrix addressable micro‐ LEDs;Wang H;International Conference on Display Technology,2018

5. Nonvolatile memristor based on heterostructure of 2D room-temperature ferroelectric α-In 2 Se 3 and WSe2;Yang H;Sci China Inf Sci,2019

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3. Design and Characterization of n–Si/p–CdO Broken Gap Heterojunctions as High Frequency PMOSFETs and Microwave Resonators;IEEE Sensors Journal;2021-06-15

4. Yb/InSe/SiO₂/Au Straddling-Type Tunneling Devices Designed As Photosensors, MOS Capacitors, and Gigahertz Bandstop Filters;IEEE Transactions on Electron Devices;2021-03