Microstructural Analysis of AgIn5VI8 (VI: S, Se, Te) Ternary Semiconductors by X-Ray Diffraction-Reference-Cited by-同舟云学术

Microstructural Analysis of AgIn5VI8 (VI: S, Se, Te) Ternary Semiconductors by X-Ray Diffraction

Published:2019 Issue:5 Volume:22 Page:
ISSN:1980-5373
Container-title:Materials Research
language:
Short-container-title:Mat. Res.

Author:

Fermin José R.¹^ORCID,Rincón Carlos Durante²,Castro Jaime A.²

Affiliation:

1. Universidad del Zulia, Venezuela; Universidad Rafael Urdaneta, Venezuela

2. Universidad del Zulia, Venezuela

Publisher

FapUNIFESP (SciELO)

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

http://www.scielo.br/pdf/mr/v22n5/1516-1439-mr-22-05-e20190752.pdf

Reference31 articles.

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3. Preparation and thermophysical properties of AgGaTe2 crystals;Burger A;Journal of Crystal Growth,2001

4. Thermal analysis andsynthesis from the melts of Cu-based quaternary compounds Cu-III-IV-VI4 and Cu2-II-IV-VI4 (II=Zn, Cd; III=Ga, In; IV=Ge, Sn; VI=Se);Matsushita H;Journal of Crystal Growth,2000

5. Photoluminescence properties of polycrystalline AgGaTe2;Krustok J;Solar Energy Materials & Solar Cells,2006

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