Characterization of SnTe films grown by molecular beam epitaxy-Reference-Cited by-同舟云学术

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Characterization of SnTe films grown by molecular beam epitaxy

Published:2006-06 Issue:2a Volume:36 Page:324-327
ISSN:0103-9733
Container-title:Brazilian Journal of Physics
language:en
Short-container-title:Braz. J. Phys.

Author:

Mengui U. A.,Abramof E.,Rappl P. H. O.,Ueta A Y.

Publisher

FapUNIFESP (SciELO)

Subject

General Physics and Astronomy

Link

http://www.scielo.br/pdf/bjp/v36n2a/a24v362a.pdf

Cited by 18 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Growth Conditions and Interfacial Misfit Array in SnTe (111) Films Grown on InP (111)A Substrates by Molecular Beam Epitaxy;ACS Applied Materials & Interfaces;2024-08-28

2. MBE growth of SnTe films on GaAs substrates with ZnTe buffer layers;Journal of Crystal Growth;2024-02

3. Surface Morphology and Electronic Properties of SnTe Films Prepared by Molecular Beam Epitaxy;physica status solidi (a);2022-12-11

4. Unit cell distortion and surface morphology diversification in a SnTe/CdTe(001) topological crystalline insulator heterostructure: influence of defect azimuthal distribution;Journal of Materials Chemistry C;2022

5. Weak antilocalization beyond the fully diffusive regime in Pb1−xSnxSe topological quantum wells;Physical Review B;2020-10-23

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