In situ transmission electron microscopy of resistive switching in thin silicon oxide layers-Reference-Cited by-同舟云学术

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In situ transmission electron microscopy of resistive switching in thin silicon oxide layers

Published:2016-11 Issue:1 Volume:1 Page:27-33
ISSN:2498-8707
Container-title:Resolution and Discovery
language:en
Short-container-title:Resolution and Discovery

Author:

Duchamp Martial,Migunov Vadim,Tavabi Amir H.,Mehonic Adnan,Buckwell Mark,Munde Manveer,Kenyon Anthony J.,Dunin-Borkowski Rafal E.

Publisher

Akademiai Kiado Zrt.

Link

https://www.akademiai.com/doi/pdf/10.1556/2051.2016.00036

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Operando analysis of a solid oxide fuel cell by environmental transmission electron microscopy;Nature Communications;2023-12-02

2. Probing switching mechanism of memristor for neuromorphic computing;Nano Express;2023-06-01

3. Extended Charge Layers in Metal-Oxide-Semiconductor Nanocapacitors Revealed by Operando Electron Holography;Physical Review Letters;2022-09-19

4. Coupling Electronic Holography and Finite-Element Method Simulations to Measure Electric Fields in Nanocapacitors.;Microscopy and Microanalysis;2022-08-01

5. Mapping electric fields in real nanodevices by operando electron holography;Applied Physics Letters;2022-06-06

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