Properties of a Novel Amorphous Transparent Conductive Oxide, InGaO3(ZnO)m

Author:

Orita M.,Ohta H.,Hirano M.,Hosono H.,Morita K.,Tanji H.,Kawazoe H.

Abstract

AbstractNovel amorphous transparent conductive oxides, InGaO3(ZnO)m, where m is an integer less than four, was developed. Optical transmittance in the visible region exceeded over 80 % and the electric conductivity at 300 K was as large as 400 S/cm. Both Seebeck and Hall coefficients exhibited negative values, indicating the conduction was n-type. It was suggested that 4s orbital of Zn2+ played a significant role for the formation of the extended state responsible for the conduction, while In3+ acted as a modifier for the stabilization of amorphous state.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference13 articles.

1. 13 Kikuchi N. , Doctoral thesis, Tokyo Institute of Technology (1997).

2. 10 JCPDS card, 40-0255.

3. Mechanism of electrical conductivity of transparentInGaZnO4

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