A Study of the Crystallization of Amorphous Indium (Tin) Oxide

Abstract

AbstractThe crystallization of amorphous indium oxide thin films with zero to 9.8 wt% SnO2, was studied using a combination of in situ MOSS (multibeam optical stress senor) and in situ resistivity measurements. We report that amorphous indium oxide deposited using electron beam evaporation undergoes crystallization in a two part process of amorphous structure relaxation followed by crystallization. MOSS measurements show that the relaxation process corresponds to a densification of the amorphous structure while crystallization results in a molar volume increase.