Modeling of the Signal Induced by an Incident Radiation in Semi-Insulating GaAs Detectors

Abstract

AbstractWe develop a Monte Carlo simulator of the charge signal induced by an external radiation on a semi-insulating GaAs detector. The role played by trapping and detrapping processes and the dynamics of generated carriers are investigated. The relative contribution to the charge signal of fast and slow time components as well as the time constant of the slow component are studied as a function of the applied voltage. Present findings provide a physical interpretation of available experimental results.