Chemical Beam Epitaxy of GaP Using Triethylgallium and Tertiarybutylphosphine-Reference-Cited by-同舟云学术

Chemical Beam Epitaxy of GaP Using Triethylgallium and Tertiarybutylphosphine

Published:1992 Issue: Volume:282 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Kelliher James T.,Bachmann Klaus J.

Abstract

ABSTRACTIn this paper we report the growth of GaP/Si heterostructures by metalorganic chemical beam epitaxy (MOCBE), including information on a MOCBE system custom built for this work. The gallium source was triethylgallium and the phosphorus source was tertiarybutylphosphine. The range for GaP epitaxy is 260 <T< 375°C. Methods of characterization included scanning electron microscopy (SEM), Auger electron (AES), X-ray photoelectron (XPS) and Rutherford backscattering (RBS) spectroscopies.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference15 articles.

1. Chemical beam epitaxy of InP and GaAs

2. Use of triethylindium and bisphosphinoethane for the growth on InP by chemical beam epitaxy

3. Ultraviolet induced metal‐organic chemical vapor deposition growth of GaAs

4. Carbon doping of GaP, GaInP, and AlInP in metalorganic molecular beam epitaxy using methyl and ethyl precursors

5. Mass Spectrometric Study of Ga ( CH 3 ) 3 and Ga ( C 2 H 5 ) 3 Decomposition Reaction in H 2 and N 2

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