1. Absorption edge and internal electric fields in amorphous semiconductors
2. Intrinsic dangling-bond density in hydrogenated amorphous silicon
3. 6. Equilibration of the electronic density of states corresponds to equilibration of structural degrees of freedom. Generally, but not always, equilibration of electronic occupations occurs under such circumstances.
4. 5. Chemical potentials may be introduced to impose system constraints (eg. stoichiometry, boundary conditions, flatness of space). A second type of “pixing” transition can be introduced which occurs when system constraints (boundary conditions, flatness of space) result in the inaccessibility of all states of lower energy than those accessible at a temperature Tx. For such systems freezing may occur even when barriers may still be overcome. For example, dislocations at interfaces. This picture is closely related to structural constraint models which are equivalent to redefining the ground state.