Large Scale and Large Area Amorphous Silicon Thin Film Transistor Arrays for Active Matrix Liquid Crystal Displays

Abstract

AbstractThe preparation and properties of hydrogenated amorphous silicon thin film transistor arrays for active matrix liquid crystal displays are reported. The effect of amorphous silicon film preparation conditions on the field effect mobility of thin film transistors was investigated. The dry etching rate of silicon nitride film was studied.The thin film transistor arrays have 408 ˜ 640 transistors on the first version and 450 ˜ 640 ˜ 3 transistors on the second version. The liquid crystal panel fabricated using the first version arrays showed good characteristics.