Carrier-selective contact GaP/Si solar cells grown by molecular beam epitaxy-Reference-Cited by-同舟云学术

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Carrier-selective contact GaP/Si solar cells grown by molecular beam epitaxy

Published:2018-02-28 Issue:4 Volume:33 Page:414-423
ISSN:0884-2914
Container-title:Journal of Materials Research
language:en
Short-container-title:J. Mater. Res.

Author:

Zhang Chaomin,Vadiee Ehsan,King Richard R.,Honsberg Christiana B.

Abstract

Abstract

Publisher

Springer Science and Business Media LLC

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference31 articles.

1. Hole Selective MoOx Contact for Silicon Solar Cells

2. Current Losses at the Front of Silicon Heterojunction Solar Cells

3. OPAL 2: Rapid optical simulation of silicon solar cells

4. Silicon heterojunction solar cell with passivated hole selective MoOx contact

5. Molybdenum and tungsten oxide: High work function wide band gap contact materials for hole selective contacts of silicon solar cells

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1. Design of van der Waals heterostructures composed of g-C3N4 and III-V materials for solar cell;Surfaces and Interfaces;2024-07

2. Nature of contaminants introduced in silicon wafers during molecular beam epitaxy chamber annealing;AIP Advances;2023-03-01

3. Design of Van Der Waals Heterostructures Composed of G-C3n4 and Ⅲ-Ⅴ Materials for Solar Cell;2023

4. Carrier‐selective contacts using metal compounds for crystalline silicon solar cells;Progress in Photovoltaics: Research and Applications;2022-03-16

5. Dopant-free materials for carrier-selective passivating contact solar cells: A review;Surfaces and Interfaces;2022-02

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