Photovoltaic Effect in the Anisotype GaSe-InSe Heterojunctions Under Pressure

Abstract

AbstractThe influence of mechanical pressure along the direction across the interface of n-InSe-p-GaSe heterojunctions on saturation photo-e.m.f. and short-circuit current is investigated. It is shown that at the InSe/GaSe optical contacts subjected to a pressure P = 35-40 kPa an increase of the open-circuit voltage nearly twice and short-circuit current more than by a factor of five in comparison to the initial samples takes place. It makes possible to predict a possibility of considerable increasing photoconversion efficiency of such structures.