Interfacial Reactions Between Ain Substrate And 4-A Family Elements

Abstract

ABSTRACTInterfacial reactions between A1N substrate and 4A-family elements including Ti, Zr and Hf were studied. The samples were prepared by Physical Vapour Deposition and annealed at different temperatures from 200°C to 800°C. X-ray diffraction (XRD) and Rutherford backscattering spectrometry (RBS) were employed to detect the compounds formed at the interfaces between them. For Ti/AIN system, when the samples were annealed from 600°C to 800°C for 1 hour, it was found from XRD patterns that TiAl3, TiN, and Ti4N3.x including Ti2N were formed at Ti/AIN interface. With the temperature increasing, the intensities of Ti, TiN(200), Ti2N and Ti4N3.x diffraction peaks decreased while that of TiAl3 and TiN(111) increased. For Zr/AlN system, it was found that the reactions between Zr and AlN resulted in the formation of Al3Zr at about 300°C and Al2Zr at about 500°C. According to RBS spectra, it can be assumed that Al3Zr was the direct product by the reaction between AlN and Zr and Al2Zr was formed by the reaction between Al3Zr and Zr. For Hf/AlN system, however, even the sample was annealed at 800°C, no compound resulted from interfacial reactions was detected.