Site Occupation of Implanted Te in Gaas As a Function of Implantation Dose

Abstract

ABSTRACTTe atoms were implanted in GaAs with doses ranging from 1013 to 1016 atoms/cm2, and annealed with the rapid thermal annealing technique. The samples were studied by Mössbauer Spectroscopy, Rutherford Backscattering Spectroscopy – Channeling, and the Van der Pauw-method. While at the lowest implantation dose an unperturbed substitutional site is observed at all annealing temperatures, at the highest implantation dose a strong deviation from a central position in an unperturbed configuration is observed at all temperatures. At the intermediate doses a high degree of substitutionality is observed between annealing temperatures of 200°C and 500°C only.