Stress Dependent Electrical Activation of Implanted Si IN GaAs - A Four Point Bending Study

Abstract

AbstractA four point bending experiment was conducted to study the effect of stress on the electrical activation of implanted 29Si in GaAs. The stress distribution in the SiNx-coated GaAs was quantitatively examined. 29Si electrical activation was found to depend strongly on the magnitude of the stress when specimens were annealed under tensile stress; compressive stress had a negligible effect. The n-type GaAs was converted into p-type under excess tensile stress. This stress dependence of electrical activation is attributed to the differences in dislocation characteristics and its interaction with implanted Si under tensile or compressive bending.