Author:
Jorgensen H.,Schreiner R. K.,Deschler M.
Abstract
AbstractThe complete requested range of epitaxial deposition from one monolayer to tens of microns is available integrating LP-MOVPE and LP-VPE into wafer fabrication. Uniformity across 2 inch wafers for thickness, composition, and doping show a variation of less than 2 %. Electrical properties of the 1014 cm−3range and less for background doping, carrier mobilities of 210,000 cm2/Vs for AIGaAs and 190,000 cm2/Vs for GalnAs, both HEMT structures, are achieved. FWHM of 3.4 meV and 18.6 meV for 10 nm and 2 nm GaInAsP wells have been measured. GaAsP layers including a “graded” layer reveal FWHM of 15 nm. A new model for the understanding of high growth rates in the hydride system is demonstrated.
Publisher
Springer Science and Business Media LLC
Reference18 articles.
1. /18/ Deschler M. , Gruter K. , Schlegel A. , Jüirgensen H. and Balk P. in Les Editions de Physique, Nougier J.P. , Gasquet O. (ed.), Proc. Europ. Conf. on Solid State Device Research, Montpellier, 1988, p. 689.
2. Controlled uniform growth of GaInAsP/InP structures for laser application on 2 inch wafers by LP-MOVPE at 20 mbar