Author:
Trapp K. D. C.,Asom M. T.,Carver G. E.,Monberg E. M.,Thiel F. A.,Barns R. L.
Abstract
AbstractExpanding interest in large-scale fabrication of electronic and photonic devices and in the scale-up of epitoxial growth reactors is creating the need for high quality large diameter InP substrate material. This paper will discuss the evaluating of three-inch diameter semi-insulating Fe-doped InP substrate material purchased from two commercial suppliers. The results of Photon Back Scatter, Infrared Transmission Microscopy, Hall Effect, and Spatially Resolved Photoluminescence measurements will be presented and evaluated.
Publisher
Springer Science and Business Media LLC
Reference10 articles.
1. Photoluminescence studies of surface damage states in InP
2. [7] Yamaguchi A. , Umebu I. , Akita K. , Fujitsu Scientific & Technical Journal, p. 71, June 1981.
3. InP growth and properties
Cited by
2 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献