Silicon-Nickel Compounds by Ion Implantation

Abstract

ABSTRACTCompounds of silicon and nickel have been formed by implanting silicon ions into nickel at various fluences and temperatures. Temperature during implantation is a major factor controlling implanted ion concentrations and phase developments. The ordered phase Ni3Si, which forms during implantation at 600°C, is replaced by Ni5Si2 during implantation at 400°C or below. In contrast to aluminum implantation of nickel, crystalline phases form even at high fluences (>1 × 1018 ions/cm2) and at low temperatures (<200°C) in silicon implanted nickel.