Abstract
The effect of Ga doping on the grain boundary properties of a ZnO varistor has been presented in this note. Within the range of doping level studied, it is shown that Ga acts as a donor at the grain boundary and behaves similar to that of Al.1 The grain boundary doping behavior of both Ga and Al, when acting as donors, can therefore be represented by the same defect model.
Publisher
Springer Science and Business Media LLC
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Cited by
18 articles.
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