Mechanisms of Transition Metal Diffusion into Semiconductor Film

Abstract

ABSTRACTDescriptions of metal (Me) diffusion into semiconductor (Se) film by diffusion-kinetic and purely kinetic methods were compared. To analyze thin film diffusion, thin film surfaces were considered as a substantial source/sink of point defects. Conditions of transition from one Me diffusion transport mechanism/regime to another, when Se sample thickness is changed, were found to be practically the same in both considerations. Critical Se film size, dislocation density, and temperature of diffusion mechanisms and regimes coincide, providing a correct interpretation of the experimental results in terms of the corresponding diffusion mechanism.