CW Annealing Techniques for Junction Formation in Ge

Abstract

ABSTRACTCW scanned Argon laser annealing is used to form photo diodes in single crystal Boron implanted germanium. The starting material is doped n–type to 4 × 1015 cm−3 and oriented 2° off the <100>. For annealing, a substrate temperature of 250°C is employed in conjunction with a beam spot diameter of 50 μm and scan speeds in the vicinity of 1 cm/sec. Pyrolytic oxides are deposited to provide a protective and antireflective coating. Devices are fabricated and display dark leakage characteristics of the order of ∼ 10−4 A/cm2 which is comparable to diodes made by more conventional techniques.