Author:
Sengupta D.K.,Fang W.,Malin J.I.,Kuo H.C.,Horton T.,Curtis A.,Gardner N.F.,Flachsbart B.,Wohlmuth W.,Turnbull D.,Chuang S.L.,Hsieh K. C.,Cheng K.Y.,Adesida I.,Feng M.,Bishop S.G.,Stillman G. E.
Abstract
AbstractA shift in the peak response wavelength and a broadening of the photoresponse spectrum is demonstrated for intersubband absorption in n-doped GaAs/AIGaAs multiple quantum well detectors following intermixing of the well and barrier layers during rapid thermal annealing. In general, a decrease in performance is observed for the RTA QWIPs when compared to the as-grown detectors. The peak absolute response of the annealed QWIPs is lower by almost a factor of four, which results in corresponding decrease in quantum efficiency. In addition, the noise performance results in a detectivity which is five times lower than that of QWIPs fabricated from as-grown structures.
Publisher
Springer Science and Business Media LLC
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