Ultra-Short Pulse Laser Annealing

Abstract

ABSTRACTA single picosecond pulse laser annealing of ion-implanted Si is reviewed as ultra-short pulse laser annealing, comparing them with nanosecond pulse and picosecond-pulse train annealing. In order to clarify the physical mechanism of pulsed laser annealing, the dynamic behavior of the amorphous to crystalline transition has been investigated by means of time-dependent optical reflectivity measurement at 0.63 µm (cw) and 1.06 µm (30-ps pulse itself) under the irradiation of the annealing beam of a single 30-ps laser pulse at 1.06 µm. A tentative model is proposed for explaining the results and further problems which remain to be resolved are discussed.