Structural and Optical Properties of Porous III-V Semiconductors GaAs, InP Prepared by Electrochemical Etching-Reference-Cited by-同舟云学术

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Structural and Optical Properties of Porous III-V Semiconductors GaAs, InP Prepared by Electrochemical Etching

Published:2013 Issue: Volume:1534 Page:A99-A104
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Dmitruk Nicholas L.,Berezovska Natalia I.,Dmitruk Igor M.,Naumenko Denis O.,Simkiene Irene,Snitka Valentinas

Abstract

Papers in the Appendix were published in electronic format as Volume 1534

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference13 articles.

1. Raman scattering of nanoporous semiconductors

2. Phonon Frequencies in GaAs

3. Two-phonon Raman scattering in GaAs

4. Morphology and photoluminescence studies of electrochemically etched heavily doped p-type GaAs in HF solution

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Structural and luminescent characteristics of porous GaAs;Journal of Luminescence;2017-08

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