Author:
Luneville L.,Largeau L.,Deranlot C.,Moncoffre N.,Serruys Y.,Ott F.,Baldinozzi G.,Simeone D.
Abstract
ABSTRACTThis work clearly demonstrates that the X Ray Reflectometry technique (XRR), extensively used to assess the quality of microelectronic devices can be a useful tool to study the first stages of ion beam mixing. This technique allows measuring the evolution of the Si concentration profile in irradiated Cr/Si layers. From the analysis of the XRR profiles, it clearly appears that the Si profile cannot be described by a simple error function.
Publisher
Springer Science and Business Media LLC