Using Dilute Nitrides to Achieve Record Solar Cell Efficiencies-Reference-Cited by-同舟云学术

Using Dilute Nitrides to Achieve Record Solar Cell Efficiencies

Published:2013 Issue: Volume:1538 Page:161-166
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Jones-Albertus Rebecca,Becker Emily,Bergner Robert,Bilir Taner,Derkacs Daniel,Fidaner Onur,Jory David,Liu Ting,Lucow Ewelina,Misra Pranob,Pickett Evan,Suarez Ferran,Sukiasyan Arsen,Sun Ted,Zhang Lan,Sabnis Vijit,Wiemer Mike,Yuen Homan

Abstract

ABSTRACTHigh quality dilute nitride subcells for multijunction solar cells are achieved using GaInNAsSb. The effects on device performance of Sb composition, strain and purity of the GaInNAsSb material are discussed. New world records in efficiency have been set with lattice-matched InGaP/GaAs/GaInNAsSb triple junction solar cells and a roadmap to 50% efficiency with lattice-matched multijunction solar cells using GaInNAsSb is shown.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference19 articles.

1. III–V multijunction solar cells for concentrating photovoltaics

2. Current-matched triple-junction solar cell reaching 41.1% conversion efficiency under concentrated sunlight

3. 1-eV solar cells with GaInNAs active layer

4. InGaAsN solar cells with 1.0 eV band gap, lattice matched to GaAs

5. Limiting efficiencies for photovoltaic energy conversion in multigap systems

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