Charging behavior of MNOS and SONOS memory structures with embedded semiconductor nanocrystals - Computer simulation-Reference-Cited by-同舟云学术

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Charging behavior of MNOS and SONOS memory structures with embedded semiconductor nanocrystals - Computer simulation

Published:2013 Issue: Volume:1534 Page:A25-A30
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Molnár K. Z.,Turmezei P.,Horváth Zs. J.

Abstract

Papers in the Appendix were published in electronic format as Volume 1534

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference11 articles.

1. Electrical and memory properties of silicon nitride structures with embedded Si nanocrystals

2. Charge Transport and Storage in Metal‐Nitride‐Oxide‐Silicon (MNOS) Structures

3. Properties of MNOS structures

4. Charging behaviour of MNOS structures with embedded Ge nanocrystals

5. Low‐field transient behavior of MNOS devices

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of location of Si or Ge nanocrystals on the memory behavior of MNOS structures;Physica E: Low-dimensional Systems and Nanostructures;2013-06

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