Nondestructive Study of Metal-Silicon Interfaces Using Soft X-Ray Emission Spectroscopy

Abstract

ABSTRACTSi L2,3 valence band soft x-ray emission spectrum (SXES) due to an e ectron excitation for silicides shows a clear modification from that for Si single crystal. Using this fact in combination with the incident angle variation(IAV) device, a non-destructive in-depth analysis of a Au(thin film)-Si(lll) contact is successfully carried out. Also, the SXES method has clarified the fact that a fair amount of the Si-s valence band density of state (yB-DOS) is included in the upper part of the yB-DOS for a Au-Si alloy, or Au-silicide, due to the Au-Si bond formation, which is a clear contrast to proposals given so far.